Hitachi Energy and Pakal Technologies Join Forces in Breakthrough Silicon Power Semiconductor for High-Voltage Modules
Next-generation ≥3.3 kV power modules critical to advance rail, renewables, energy storage, AI and data center infrastructure
Hitachi Energy`s advanced semiconductor manufacturing facility
ZURICH, Feb. 25, 2026 /PRNewswire/ — Hitachi Energy, a global leader in electrification, and Pakal Technologies, a cutting-edge innovator in silicon power semiconductor design, announced a collaboration to advance shared value creation and sustainable growth. Hitachi Energy will incorporate Pakal Technologies’ groundbreaking Insulated Gate Turn-Off (Thyristor), IGTO(t)™, silicon power switch into its portfolio of market-leading high-voltage power modules, beginning with devices used in essential applications such as rail, renewables, energy storage, AI and data center infrastructure.
Semiconductors sit inside almost every critical system, forming the backbone of a stable and modern grid. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation – which delivers 30 percent lower losses compared to today’s widely used devices – the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest performing ≥3.3 kV power semiconductor modules for Hitachi Energy to offer to its large and growing global customer base, delivering higher performance, lower operating costs, and greater long-term reliability across critical electrification projects.
Niklas Persson, Managing Director of Hitachi Energy’s Grid Integration business unit, said:
With a century-long legacy of in-house semiconductor manufacturing expertise and ongoing expansion, Hitachi Energy is committed to advancing innovation in power electronics.
”We are pleased to join forces with Pakal Technologies to incorporate its novel IGTO(t) within our semiconductor portfolio. This collaboration represents over time an opportunity to strengthen the global energy ecosystem at its core.”
Ben Quinones, CEO of Pakal Technologies, said:
Pakal Technologies was founded to make power conversion simpler, better, and more efficient.
” Collaborating with Hitachi Energy is an honor and secures a long-term partner capable of scaling impact with us.Having our IGTO(t) platform recognized by a company with Hitachi Energy’s exceptional history for quality, reliability, and performance in the energy landscape ensures we can contribute to today’s sprint toward the electrification era.”
The IGTO(t) represents the first new high-voltage silicon power semiconductor since the IGBT was introduced in the 1980s. The IGTO(t) delivers 30 percent lower conduction losses at high current and temperature than IGBT, while maintaining compatibility with existing module architectures. At the system level, these performance advances enable higher power density, reduced thermal and cooling requirements, and materially improved energy efficiency.
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Hitachi Energy and Pakal Technologies Join Forces in Breakthrough Silicon Power Semiconductor for High-Voltage Modules, source
